5 結論

通過以上實驗結果和分析，表明了有源電壓控制技術是實現IGBT可靠串聯的一種良好的方案。另一方面，在較高工作頻率下，采用低耐壓器件串聯比采用單只高耐壓器件具有多種好處，包括低損耗、低成本、高冗余度等。考慮到在目前的技術條件下，單個IGBT器件的耐壓值再繼續(xù)提高難度很大，所以能夠實現IGBT器件可靠串聯的有緣電壓控制技術具有廣泛的應用空間。

[附錄]

Ps即Pswitching，是單個IGBT的開關損耗：Pswitching=( Eon+ Eoff)*f

Pc即Pconduction，是單個IGBT的導通損耗：

Pconduction=VCE,on*Ic*D

其中D為占空比，設定為50%，則平均的Pconduction應為：

Pconduction=VCE,on*Ic*0.5

Pts即Ptotal,single，是單個IGBT的總功率損耗：Ptotal=Pswitching+ Pconduction

Pt即Ptotal，是串、并聯后每個方案中IGBT的

總功率損耗：

Ptotal=Ptotal,single*N

其中N是串、并聯個數。

參考文獻

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